Type 2N3506
Geometry
1506
Polarity NPN
Qual Level: JAN - JANTXV
Data Sheet No. 2N3506
Generic Part Number:
2N3506
REF: MIL-PRF-19500/349
Features:
General-purpose silicon transistor
for switching and amplifier appli-
cations.
Housed in
TO-39
case.
Also available in chip form using
the
1506
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/349
which
Semicoa meets in all cases.
Rating
Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
40
V
Collector-Base Voltage
V
CBO
60
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current, Continuous
I
C
3.0
A
Power Dissipation, T
A
= 25
o
C
1.0
W
Derate above 25
o
C
5.71
mW/
o
C
Operating Junction Temperature
T
J
-65 to +200
o
C
Storage Temperature
T
STG
-65 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
T
TO-39
Data Sheet No. 2N3506
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 A
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 A
Collector-Emitter Cutoff Current
V
CE
= 40 V, V
EB
= 4 V
Collector-Emitter Cutoff Current
V
CE
= 40 V, V
EB
= 4 V, T
A
= +150
o
C
Collector Current Continuous
V
CB
= 50 V
I
C
3.0
---
A
I
CEX2
---
1.0
A
I
CEX1
---
1.0
A
V
V
(BR)EBO
5.0
---
V
(BR)CEO
40
---
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
60
---
V
ON Characteristics
Symbol
Min
Max
Unit
DC Current Gain
I
C
= 500 mA, V
CE
= 1 V (pulsed)
h
FE1
50
250
---
I
C
= 1.5 A, V
CE
= 2 V (pulsed)
h
FE2
40
200
---
I
C
= 2.5 A, V
CE
= 3 V (pulsed)
h
FE3
30
---
---
I
C
= 3.0 A, V
CE
= 5 V (pulsed)
h
FE4
25
---
---
I
C
= 500 mA, V
CE
= 1 V (pulsed), T
A
= -55
o
C
h
FE5
25
---
---
Base-Emitter Saturation Voltage
I
C
= 500 mA, I
B
= 50 mA (pulsed)
V
BE(sat)1
---
1.0
V dc
I
C
= 1.5 A, I
B
= 150 mA (pulsed)
V
BE(sat)2
0.9
1.4
V dc
I
C
= 2.5 A, I
B
= 250 mA (pulsed)
V
BE(sat)3
---
2.0
V dc
Collector-Emitter Saturation Voltage
I
C
= 500 mA, I
B
= 50 mA (pulsed)
V
CE(sat)1
---
0.5
V dc
I
C
= 1.5 A, I
B
= 150 mA (pulsed)
V
CE(sat)2
---
1.0
V dc
I
C
= 2.5 A, I
B
= 250 mA (pulsed)
V
CE(sat)3
---
1.5
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 100 mA, f = 20 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 3 V, I
C
= 0, 100 kHz < f < 1 MHz
pF
C
IBO
---
300
pF
C
OBO
---
40
|h
FE
|
3.0
15
---
Pulse Response Characteristics
Symbol
Min
Max
Unit
Delay Time
I
C
= 1.5 A, I
B1
= 150 mA
Rise Time
I
C
= 1.5 A, I
B1
= 150 mA
Storage Time
I
C
= 1.5 mA, I
B2
= I
B1
= 150 mA
Fall Time
I
C
= 1.5 mA, I
B2
= I
B1
= 150 mA
30
ns
t
r
---
t
d
---
15
ns
t
s
---
55
ns
t
f
---
35
ns
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